stD3NB50 n - channel 500v - 2.5 w - 3a - ipak/dpak powermesh ? mosfet preliminary data n typical r ds(on) = 2.5 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using the latest high voltage mesh overlay ? process, sgs-thomson has designed an advanced family of power mosfets with outstanding performances. the new patent pending strip layout coupled with the companys proprietary edge termination structure, gives the lowest r ds(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. applications n switch mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drive this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without not ice. internal schematic diagram absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 500 v v dgr drain- gate voltage (r gs = 20 k w ) 500 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 o c3a i d drain current (continuous) at t c = 100 o c 1.9 a i dm ( ) drain current (pulsed) 12 a p tot total dissipation at t c = 25 o c50w derating factor 0.4 w/ o c dv/dt( 1 ) peak diode recovery voltage slope 4.5 v/ns t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area ( 1 ) i sd 3a, di/dt 200 a/ m s, v dd v (br)dss , tj t jmax may 1998 type v dss r ds(on) i d stD3NB50 500 v < 2.8 w 3 a 1 3 dpak to-252 (suffix "t4") 3 2 1 ipak to-251 (suffix "-1") 1/6
thermal data r thj-case rthj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 2.5 100 1.5 275 o c/w oc/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 3a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 50 v) 40 mj electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 500 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125 o c 1 50 m a m a i gss gate-body leakage current (v ds = 0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10v i d =1.9 a 2.5 2.8 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 3.8 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d = 1.9 a 2 2.3 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 400 62 7.5 520 84 10 pf pf pf stD3NB50 2/6
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 250 v i d = 1.9 a r g = 4.7 w v gs = 10 v 11 8 17 12 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 400 v i d =3.8 a v gs = 10 v 15 6.5 5 21 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 400 v i d = 3.8 a r g = 4.7 w v gs = 10 v 8 5 14 12 9 20 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 3.8 15.2 a a v sd ( * ) forward on voltage i sd = 3.8 a v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 3.8 a di/dt = 100 a/ m s v dd = 100 v t j = 150 o c 245 980 8 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area stD3NB50 3/6
dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 1 3 = = b3 b b6 b2 e g = = = = b5 2 to-251 (ipak) mechanical data 0068771-e stD3NB50 4/6
dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.9 0.025 0.035 b2 5.2 5.4 0.204 0.212 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 9.35 10.1 0.368 0.397 l2 0.8 0.031 l4 0.6 1 0.023 0.039 == d l2 l4 1 3 == b e == b2 g 2 a c2 c h a1 detail "a" a2 detail "a" to-252 (dpak) mechanical data 0068772-b stD3NB50 5/6
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsa bility for the consequences of use of such information nor for any infringement of patents or other rights of third part ies which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication su persedes and replaces all information previously supplied. sgs-thomson microelec tronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectonics. ? 1998 sgs-thomson microelectronics - printed in italy - all rights reserved sgs-thomson microelec tronics gr oup of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - morocco - the neth erlands - singapore - spain - sweden - switzerland - t aiwan - thailand - united kingdom - u.s.a . . . stD3NB50 6/6
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